? 2015 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 ? c to 175 ? c 75v v dgr t j = 25 ? c to 175 ? c, r gs = 1m ? 75 v v gss continuous ? 20 v v gsm transient ? 30 v i d25 t c = 25 ? c 500 a i dm t c = 25 ? c, pulse width limited by t jm 1700 a i a t c = 25 ? c 200 a e as t c = 25 ? c3j p d t c = 25 ? c 830 w t j -55 ... +175 ? c t jm 175 ? c t stg -55 ... +175 ? c t l maximum lead temperature for soldering 300 c t sold plastic body for 10s 260 ? c v isol 50/60 hz, 1 minute 2500 v~ f c mounting force 50..200 / 11..45 n/lb. weight 8 g symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 3ma 75 v v gs(th) v ds = v gs , i d = 8ma 2.5 5.0 v i gss v gs = ? 20v, v ds = 0v ?????????????????????? 200 na i dss v ds = v dss , v gs = 0v 25 ? a t j = 150 ? c 2.0 ma r ds(on) v gs = 10v, i d = 100a, note 1 1.6 m ? n-channel enhancement mode avalanche rated fast intrinsic diode MMIX1F520N075T2 ds100269b(12/15) v dss = 75v i d25 = 500a r ds(on) ? ? ? ? ? 1.6m ? ? ? ? ? features ? silicon chip on direct-copper bond (dcb) substrate ? isolated substrate - excellent thermal transfer - increased temperature and power cycling capability - high isolation voltage (2500 v~) ? 175c operating temperature ? very high current handling capability ? fast intrinsic diode ? avalanche rated ? very low r ds(on) advantages ? easy to mount ? space savings ? high power density applications ? dc-dc converters and off-line ups ? primary-side switch ? high speed power switching applications (electrically isolated tab) trencht2 tm gigamos tm hiperfet tm power mosfet g d s isolated tab d s g g = gate d = drain s = source
ixys reserves the right to change limits, test conditions, and dimensions. MMIX1F520N075T2 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1. pulse test, t ? 300 ? s, duty cycle, d ? 2%. symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 60a, note 1 95 155 s c iss 41 nf c oss v gs = 0v, v ds = 25v, f = 1mhz 4150 pf c rss 530 pf r gi gate input resistance 1.36 ?? t d(on) 48 ns t r 36 ns t d(off) 80 ns t f 35 ns q g(on) 545 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 260a 177 nc q gd 135 nc r thjc 0.18 ?? c/w r thcs 0.05 ? c/w source-drain diode symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. i s v gs = 0v 520 a i sm repetitive, pulse width limited by t jm 1600 a v sd i f = 100a, v gs = 0v, note 1 1.25 v t rr 150 ns i rm 7 a q rm 357 nc resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 200a r g = 1 ? (external) i f = 150a, v gs = 0v -di/dt = 100a/ ? s v r = 37.5v
? 2015 ixys corporation, all rights reserved MMIX1F520N075T2 fig. 1. output characteristics @ t j = 25oc 0 50 100 150 200 250 300 350 400 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 v ds - volts i d - amperes v gs = 15v 10v 8v 4v 6v 7v 5v fig. 2. output characteristics @ t j = 150oc 0 50 100 150 200 250 300 350 400 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 v ds - volts i d - amperes v gs = 15v 10v 8v 7v 3 v 6 v 4 v 5v fig. 3. normalized r ds(on) vs. junction temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d < 520a fig. 4. normalized r ds(on) vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 0 50 100 150 200 250 300 350 i d - amperes r ds(on) - normalized v gs = 10v 15v t j = 175oc t j = 25oc fig. 6. input admittance 0 25 50 75 100 125 150 175 200 225 250 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 v gs - volts i d - amperes t j = 150oc 25oc - 40oc fig. 5. drain current vs. case temperature 0 100 200 300 400 500 600 -50 -25 0 25 50 75 100 125 150 175 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. MMIX1F520N075T2 fig. 7. transconductance 0 50 100 150 200 250 300 0 50 100 150 200 250 i d - amperes g f s - siemens t j = - 40oc 150oc 25oc fig. 8. forward voltage drop of intrinsic diode 0 50 100 150 200 250 300 350 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 v sd - volts i s - amperes t j = 150oc t j = 25oc fig. 9. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 100 200 300 400 500 600 q g - nanocoulombs v gs - volts v ds = 37.5v i d = 260a i g = 10ma fig. 10. capacitance 0.1 1 10 100 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - nanofarad s f = 1 mhz c iss c rss c oss fig. 11. forward-bias safe operating area 1 10 100 1,000 10,000 110100 v ds - volts i d - amperes 100s 1ms 10ms r ds(on) limit t j = 175oc t c = 25oc single pulse 100ms dc 25s fig. 12. maximum transient thermal impedance 0.0001 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - k / w
? 2015 ixys corporation, all rights reserved MMIX1F520N075T2 fig. 14. resistive turn-on rise time vs. drain current 0 20 40 60 80 100 120 140 160 180 40 60 80 100 120 140 160 180 200 i d - amperes t r - nanoseconds t j = 25oc t j = 125oc r g = 1 ? , v gs = 10v v ds = 37.5v fig. 15. resistive turn-on switching times vs. gate resistance 0 100 200 300 400 500 600 12345678910 r g - ohms t r - nanoseconds 0 40 80 120 160 200 240 t d ( on ) - nanoseconds t r t d(on) - - - - t j = 125oc, v gs = 10v v ds = 37.5v i d = 100a i d = 200a fig. 16. resistive turn-off switching times vs. junction temperature 30 32 34 36 38 40 42 44 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 70 80 90 100 110 120 130 140 t d ( off ) - nanoseconds t f t d(off) - - - - r g = 1 ? , v gs = 10v v ds = 37.5v i d = 200a i d = 100a fig. 17. resistive turn-off switching times vs. drain current 32 34 36 38 40 42 44 46 40 60 80 100 120 140 160 180 200 i d - amperes t f - nanoseconds 40 60 80 100 120 140 160 180 t d ( off ) - nanoseconds t f t d(off) - - - - r g = 1 ? , v gs = 10v v ds = 37.5v t j = 25oc t j = 125oc fig. 13. resistive turn-on rise time vs. junction temperature 0 20 40 60 80 100 120 140 160 180 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 1 ? , v gs = 10v v ds = 37.5v i d = 200a i d = 100a fig. 18. resistive turn-off switching times vs. gate resistance 0 100 200 300 400 500 600 12345678910 r g - ohms t f - nanoseconds 0 100 200 300 400 500 600 t d ( off ) - nanoseconds t f t d(off) - - - - t j = 125oc, v gs = 10v v ds = 37.5v i d = 200a, 100a ixys ref: ixfz520n075t2 (v9)3-03-10
ixys reserves the right to change limits, test conditions, and dimensions. MMIX1F520N075T2 pin: 1 = gate 5-12 = source 13-24 = drain package outline
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